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Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

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3 Author(s)
F. Bruccoleri ; MESA Res. Inst., Twente Univ., Enschede, Netherlands ; E. A. M. Klumperink ; B. Nauta

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-μm CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

Published in:

IEEE Journal of Solid-State Circuits  (Volume:36 ,  Issue: 7 )
IEEE RFIC Virtual Journal
IEEE RFID Virtual Journal