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0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

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6 Author(s)
Kumar, V. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Lu, W. ; Schwindt, R. ; Van Hove, J.
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MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs

Published in:

Electronics Letters  (Volume:37 ,  Issue: 13 )