Referenced Items are not available for this document.
MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs
Published in:
Electronics Letters
(Volume:37
,
Issue:
13
)
Date of Publication: 21 Jun 2001
- Page(s):
- 858 - 859
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6972707
- Digital Object Identifier :
- 10.1049/el:20010582
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 21 Jun 2001
- Sponsored by :
- Institution of Engineering and Technology
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