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Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits

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2 Author(s)
Filanovsky, I.M. ; Alberta Univ., Edmonton, Alta., Canada ; Allam, A.

Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient bias point of a MOS transistor. The conditions under which this effect occurs, and stability of this bias point are investigated. Possible applications of this effect include voltage reference circuits and temperature sensors with linear dependence of voltage versus temperature. The theory is verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 μm CMOS process

Published in:

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on  (Volume:48 ,  Issue: 7 )

Date of Publication:

Jul 2001

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