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Optical and physical characterization of SiO2-x-Al thin-film polarizer on x-cut LiNbO3 substrate

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2 Author(s)
Y. Miyama ; Optoelectron. Res. Div., Sumitomo Osaka Cement Co. Ltd., Chiba, Japan ; H. Nagata

For the purpose of a mechanical evaluation of a metal-cladding polarizer, a precise characterization of SiO2-x-Al thin-film succession fabricated on a LiNbO3 substrate was made as well as an experimental optimization of the SiO2-x-Al polarizer for the Ti:LiNbO3 waveguide. A 10-nm-thick SiO2-x was selected as the optimized underlay of a SiO2-x-Al polarizer for the Ti:LiNbO3 waveguide using a wavelength of λ=1.55 μm. Results of scratch testing show that the adhesive strength of SiO2-x-Al films was almost the same level as that of Ti-Au films on a thick SiO2 layer, commonly used for metallic underlay of Au-plated electrodes. From observing SiO2-x -Al film using a transmission electron microscope, it was confirmed that the 10-nm-thick SiO2-x underlay stratified well without serious thickness fluctuation

Published in:

Journal of Lightwave Technology  (Volume:19 ,  Issue: 7 )