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Very-high-bandwidth In/sub 0.53/Ga/sub 0.47/As p-i-n detector arrays

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9 Author(s)
Y. Lui ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; S. R. Forrest ; G. L. Tangonan ; R. A. Jullens
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The authors fabricated and packaged 1*4 arrays of In/sub 0.53/Ga/sub 0.47/As p-i-n photodetectors connected in a GaAs FET bias-switched, common cathode circuit. The bandwidth of the discrete (packaged) photodiodes in the arrays exceeds 11 GHz, and is 5 GHz for the packaged arrays. The on/off isolation ratio for fully packaged arrays using GaAs FET bias switches was measured at both low and high frequencies. It was found that the on/off isolation of the detectors in the array was 70 dB, and the bias switching times were less than 5 ns. The performance characteristics suggest that the p-i-n detector arrays used in a common cathode, current summing configuration have applications for high-freqeuncy digital and analog optical switching applications.<>

Published in:

IEEE Photonics Technology Letters  (Volume:3 ,  Issue: 10 )