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Refractive index change of GaInAs/InP disordered superlattice waveguide

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5 Author(s)
A. Wakatsuki ; Opto-electron. Lab., Atsugi, Japan ; H. Iwamura ; Y. Suzuki ; T. Miyazawa
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The refractive index changes of disordered superlattice waveguides were measured and evaluated. A GaInAs/InP superlattice structure grown by gas-source molecular beam epitaxy (MBE) was disordered by the Si/sub 3/N/sub 4/ cap annealing method. The measurement of the wavelength response of a Bragg grating waveguide shows that the refractive indexes of the disordered region vary gradually in accordance with the development of partial disordering. Maximum refractive index changes were -1.1*10/sup -2/ for the transverse electric mode and +6.7*10/sup -3/ for the transverse magnetic mode at 1.5 mu m wavelength.<>

Published in:

IEEE Photonics Technology Letters  (Volume:3 ,  Issue: 10 )