A novel modulation scheme in semiconductor light emitters with quantum microcavities: high speed intensity modulation by switching of coupling efficiency of spontaneous emission

A modulation of coupling efficiency of spontaneous emission is proposed theoretically to result in an ultrawideband modulation of spontaneous output intensity in semiconductor light-emitting devices with quantum microcavities. The proposed modulation scheme does not involve changes in carrier population, but relies purely on the modulation of the coupling efficiency of spontaneous emission caused by electric-field-induced tuning of emission wavelength. An extremely wideband modulation is predicted, showing a cutoff frequency over 10/sup 11/ Hz and being completely free of recombination lifetime limitation.<
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