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High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

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5 Author(s)
H. K. Choi ; MIT Lincoln Lab., Lexington, MA, USA ; C. A. Wang ; D. F. Kolesar ; R. L. Aggarwal
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Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to 125 degrees C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 degrees C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 degrees C.<>

Published in:

IEEE Photonics Technology Letters  (Volume:3 ,  Issue: 10 )