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The effects of Cbc on the linearity of AlGaAs/GaAs power HBTs

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6 Author(s)
Woonyun Kim ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea ; Sanghoon Kang ; Kyungho Lee ; Minchul Chung
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It is well known that Cbc is the dominant nonlinear element in heterojunction bipolar transistors (HBTs). To study its behavior, an analytical nonlinear HBT equivalent-circuit model has been developed. The present model includes the effect of the ionized donor charge in the depleted collector region compensated by the injected mobile charge. The model-based simulation shows that, at a small-signal range, the third-order intermodulation (IM3) of the normal HBT has the normal 3:1 gain slope generated by the nonlinearity of Cbc. At a large-signal level, the load line passes through some regions with constant Cbc because its collector is fully depleted by the injected free carriers, and the growth rate of the IM3 is decreased. The punch-through collector HBT has constant Cbc during the whole RF cycle, and the IM3, which is generated by gm nonlinearity, has the normal 3:1 gain slope for the all input signal level. Therefore, the IM3 level is significantly lower for the punch-through HBT at a low-power level, but the IM3s of both devices are comparable at a high-power level. The experiment supports our proposed model

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:49 ,  Issue: 7 )