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Predictive process simulation and stress-mediated diffusion in silicon

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4 Author(s)
W. Windl ; Motorola Inc., Austin, TX, USA ; M. Laudon ; N. N. Carlson ; M. S. Daw

The silicon-based metal oxide semiconductor field effect transistor (MOSFET) is at the heart of today's semiconductor industry. Because the switching speed of a MOSFET increases linearly with shrinking dimensions, the semiconductor industry has constantly improved computer performance by scaling a more or less unchanged device geometry. Despite the successful history of device miniaturization, scaling is reaching the physical limits of traditional device materials. With the reduction of gate lengths and the use of more exotic materials such as metal gates, the influence of stress on diffusion becomes a more prevalent component in determining the final dopant profile and subsequent device performance. We present the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon as an example for modern physical process modeling. We also discuss how to effectively integrate predictive modeling tools such as this into the development of state-of-the-art semiconductor devices

Published in:

Computing in Science & Engineering  (Volume:3 ,  Issue: 4 )