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Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications

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10 Author(s)
Wen-Chau Liu ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Kong-Beng Thei ; Hung-Ming Chuang ; Kun-Wei Lin
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The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless contact, both n/sup +/ and p/sup +/ polysilicon resistors with Ti- and Co-salicide self-aligned process are used at the ends of each resistor. A simple and useful model is proposed to analyze and calculate the essential parameters of polysilicon resistors including electrical delta W(/spl Delta/W), interface resistance R/sub interface/, and pure sheet resistance R/sub pure/. This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-0.25 μm CMOS technology.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 7 )
RFIC Virtual Journal, IEEE