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Fully coupled electrothermal mixed-mode device simulation of SiGe HBT circuits

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2 Author(s)
Grasser, T. ; Inst. for Microelectron., Tech. Univ. of Vienna, Austria ; Selberherr, S.

It is well known that for the design and simulation of state-of-the-art circuits thermal effects like self-heating and coupling between individual devices must be taken into account. As compact models for modern or experimental devices are not readily available, a mixed-mode device simulator capable of thermal simulation is a valuable source of information, Considering self-heating and coupling effects results in a very complex equation system which can only be solved using sophisticated techniques. We present a fully coupled electrothermal mixed-mode simulation of an SiGe HBT circuit using the design of the μA709 operational amplifier. By investigating the influence of self-heating effects on the device behavior we demonstrate that the consideration of a simple power dissipation model instead of the lattice heat flow equation is a very good approximation of the more computation time consuming solution of the lattice heat flow equation

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 7 )

Date of Publication:

Jul 2001

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