A five-level time-domain model for quantum dot lasers: influence of carrier capture and escape processes on dynamic and static characteristic

The model is offered on the basis of the transmission line approach, which allows making researches of dynamic behavior of the quantum dot lasers. The character of the influence of a carrier captures and escapes processes on modulation and current-watt performances are researched numerically. The simulation results indicate, that the greatest influence on the laser performances have the carrier capture processes in quantum dots, and carrier capture from optical confinement layer into the wetting layer. The calculated results have good agreement with experimental data.