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Realistic copper interconnect performance with technological constraints

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3 Author(s)
Kapur, Pawan ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; McVittie, James P. ; Saraswat, K.C.

Most interconnect performance evaluations with copper, such as, line delays and repeater analysis are done assuming a constant resistivity. However, increase in electron surface scattering and fractional barrier cross section area results in a higher effective Cu resistivity (ρ eff) with dimensional shrinkage. This work models above effects, establishing reliable, future, resistivity trends for different barrier deposition technologies and thicknesses, wire temperature and copper/barrier interface quality. The resistivity trends are used to obtain realistic, future, interconnect performance metrics with Cu. These metrics are found to be a lot worse than predicted by a constant copper resistivity.

Published in:

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Date of Conference:

6-6 June 2001

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