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Improved Cu CMP process for 0.13 /spl mu/m node multilevel metallization

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7 Author(s)
N. Ohashi ; Device Dev. Center, Hitachi Ltd., Tokyo, Japan ; Y. Yamada ; N. Konishi ; H. Maruyama
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A novel two-step CMP process combining improved Cu abrasive free polishing (AFP) solution with newly developed barrier metal CMP slurry for 0.13 μm node Cu damascene process is demonstrated. This CMP process can minimize the erosion and the dishing of Cu wiring. Further, two types of Cu residues, random Cu residue, and systematic Cu residue on patterned wafer are eliminated with optimizing the total process design. Using these technologies, it is shown that 0.18 μm node 7 level multilevel metallization structure is successfully formed.

Published in:

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Date of Conference:

6-6 June 2001