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A noble metallization process using Preferential Metal Deposition (PMD)-aluminum with methylpyrroridine alane (MPA)

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9 Author(s)
Jong Myeong Lee ; Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea ; Byung Hee Kim ; Ju Young Yun ; Myoung Bum Lee
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A noble Al precursor of methylpyrooridine alane (MPA) showed excellent stabilities and lifetime compared to any other Al precursor. The preferential Metal Deposition (PMD)-Al, which used a CVD-Al process with MPA, showed excellent contact fill and electrical properties, which implied that PMD-Al using MPA can be applied to a ULSI DRAM metallization process, such as metal contact and via holes.

Published in:

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Date of Conference:

6-6 June 2001