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Instability trade-off of inter-layer or inter-metal dielectrics formation with low-k dielectrics on active and field device's characteristics

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10 Author(s)
Chen, M.J. ; Reliability Assurance Dept., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan ; Shih, J.R. ; Yu, K.F. ; Hsieh, C.C.
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The effects of back end of line (BEOL) processing with low dielectric constant (low-k) materials on active and field device performances have been studied. The study reveals: (1) there is SPICE model uncertainty because Idsat increases as more metal layers are added; (2) low-k dielectrics can enhance this Idsat increase; and (3) NMOSFET hot carrier lifetime and PMOSFET Vt stability are degraded. These effects are attributed to the BEOL-induced hydrogen generation and passivation with gate oxide dangling bonds, which are primarily created in the contact etching process. The modified process involves pure hydrogen alloy after metal-1 formation, which ensures the same device performance at metal-1 and at the final metal layer. In addition, the alloy can reduce the inverse narrow width effect and field isolation leakage currents

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Plasma- and Process-Induced Damage, 2001 6th International Symposium on

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