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Experimental study on MOSFET's flicker noise under switching conditions and modelling in RF applications

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2 Author(s)
Zhaofeng Zhang ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Lau, J.

The flicker noise mechanism under switching conditions is studied. Experimental results show that the baseband flicker noise is a superposition of upconverted gate flicker noise at each harmonic of the output current. Methods to reduce the flicker noise are discussed. Based on the measured results, the large signal flicker noise model for RF applications under switching conditions is proposed and validated by simulations and measurements. With the proposed model, the noise performance of a single-balanced Gilbert mixer for direct conversion applications is analysed and discussed

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Custom Integrated Circuits, 2001, IEEE Conference on.

Date of Conference: