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High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor

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6 Author(s)
Z. Ma ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; S. Mohammadi ; P. Bhattacharya ; L. P. B. Katehi
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A high-performance double-mesa type Si/SiGe/Si power HBT at X-band (8.4 GHz) frequency is demonstrated. Under continuous wave operation, a single 20-finger common-base Si/Si0.75Ge0.25/Si (2×10 μm2 of each emitter finger) HBT has an output power of 27.4 dBm and an associated power gain of 7 dB at peak PAE of 32.3%. These parametric values represent the state-of-the-art power performance of SiGe-based HBTs

Published in:

Electronics Letters  (Volume:37 ,  Issue: 12 )