Referenced Items are not available for this document.
1 Gbit/s III-V/CMOS hybrid receivers consisting of a GaAs- or InGaAs-photodiode and a 0.5 μm CMOS receiver circuit have been realised by wafer-bonding. The circuit is simple and compact with high sensitivity and broad bandwidth due to the direct attachment of III-V PDs and the absence of any parasitic capacitance. Sensitivities of -27.4 and -28.0 dBm at 1 Gbit/s are demonstrated for 0.85 and 1.55 μm receivers, respectively
Published in:
Electronics Letters
(Volume:37
,
Issue:
12
)
Date of Publication: 7 Jun 2001
- Page(s):
- 781 - 783
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6959625
- Digital Object Identifier :
- 10.1049/el:20010506
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 7 Jun 2001
- Sponsored by :
- Institution of Engineering and Technology
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