By Topic

Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ding-Kang Shih ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hao-Hsiung Lin ; Li-Wei Song ; Tso-Yu Chu
more authors

The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed

Published in:

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Date of Conference:

2001