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Dislocation free strained InGaAlAs-MQW growth over an InGaAsP/InP grating

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5 Author(s)
D. Takemoto ; Central Res. Labs., Hitachi Ltd., Tokyo, Japan ; K. Nakahara ; T. Tsuchiya ; T. K. Sudoh
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We grew a strained-InGaAlAs multiple quantum well (MQW) by low-pressure MOVPE over an InGaAsP grating on InP to fabricate an InGaAlAs-distributed-feedback (DFB) laser diode (LD). InP was overgrown on the grating in PH3 ambient. We found that temperature, growth rate, and PH3, partial pressure in the InP overgrowth process are the key parameters in growing dislocation-free epitaxial layers. By adjusting these parameters, we successfully grew a dislocation-free strained InGaAlAs MQW over a grating

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Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

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