By Topic

Dislocation free strained InGaAlAs-MQW growth over an InGaAsP/InP grating

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Takemoto, D. ; Central Res. Labs., Hitachi Ltd., Tokyo, Japan ; Nakahara, K. ; Tsuchiya, T. ; Sudoh, T.K.
more authors

We grew a strained-InGaAlAs multiple quantum well (MQW) by low-pressure MOVPE over an InGaAsP grating on InP to fabricate an InGaAlAs-distributed-feedback (DFB) laser diode (LD). InP was overgrown on the grating in PH3 ambient. We found that temperature, growth rate, and PH3, partial pressure in the InP overgrowth process are the key parameters in growing dislocation-free epitaxial layers. By adjusting these parameters, we successfully grew a dislocation-free strained InGaAlAs MQW over a grating

Published in:

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Date of Conference:

2001