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InP-based monolithically integrated RTD/HBT MOBILE for logic circuits

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7 Author(s)
W. Otten ; Dept. of Solid State Electron., Gerhard-Mercator-Univ. GH Duisburg, Germany ; P. Glosekotter ; P. Velling ; A. Brennemann
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A pseudo dynamic logic family is developed on InP-substrates based on the MOBILE concept. The conventional HFET as input terminal is replaced by a monolithically integrated series combination of a HBT and a RTD forming a RTBT. This combination enables a logic function defined by the RTD area only. The HBT provides a robust enhancement type operation, although for full level compatibility a buffer inverter is still necessary. A novel distributed clocking scheme is developed. The feasibility of this logic concept is experimentally verified and an OR gate is discussed in detail

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Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

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