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Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters

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8 Author(s)
D. G. Deppe ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; C. Cao ; O. B. Shchekin ; Z. Zou
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In this paper we discuss recent experiments performed to characterize the energy relaxation of charge carriers in self-organized QDs. We find several interesting phenomena in these QDs, including a QD size dependence in the relaxation time. While large InGaAs QDs with closely spaced energy levels show relaxation times from the QD wetting layer to the 0-dimensional ground state of ~1 ps, smaller InAs QDs with more widely spaced energy levels show relaxation times of ~7 ps. In addition, an interesting pump dependence exists for the relaxation time (as measured by the radiative emission) for the first excited radiative transition to the ground state transition

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Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

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