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High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs

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4 Author(s)
H. -D. Shih ; Texas Instrum. Inc., Dallas, TX, USA ; B. Kim ; K. Bradshaw ; H. Q. Tserng

In/sub 0.08/Ga/sub 0.92/As MESFETs were grown in GaAs

Published in:

IEEE Electron Device Letters  (Volume:9 ,  Issue: 11 )