Referenced Items are not available for this document.
In/sub 0.08/Ga/sub 0.92/As MESFETs were grown in GaAs
Published in:
Electron Device Letters, IEEE
(Volume:9
,
Issue:
11
)
Date of Publication: Nov. 1988
- Page(s):
- 604 - 606
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3310540
- Digital Object Identifier :
- 10.1109/55.9290
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1988
- Sponsored by :
- IEEE Electron Devices Society
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