By Topic

Electrical properties of Ga-implanted Si p/sup +/-n shallow junctions fabricated by low-temperature rapid thermal annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lin, C.-M. ; Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA ; Steckl, Andrew J. ; Chow, T.P.

p/sup +/-n shallow-junction diodes were fabricated using on-axis Ga/sup 69/ implantation into crystalline and preamorphized Si, at energies of 25-75 keV for a dose of 1*10/sup 15//cm/sup 2/, which is in excess of the dosage (2*10/sup 14//cm/sup 2/) required to render the implanted layer amorphous. Rapid thermal annealing at 550-600 degrees C for 30 s resulted in the solid-phase epitaxial (SPE) regrowth of the implanted region accompanied by high Ga activation and shallow junction (60-130 nm) formation. Good diode electrical characteristics for the Ga implantation into crystalline Si were obtained; leakage current density of 1-1.5 nA/cm/sup 2/ and ideality factor of 1.01-1.03. Ga implantation into preamorphized Si resulted in a two to three times decrease in sheet resistance, but a leakage current density orders of magnitude higher.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 11 )