Electrical properties of Ga-implanted Si p/sup +/-n shallow junctions fabricated by low-temperature rapid thermal annealing

p/sup +/-n shallow-junction diodes were fabricated using on-axis Ga/sup 69/ implantation into crystalline and preamorphized Si, at energies of 25-75 keV for a dose of 1*10/sup 15//cm/sup 2/, which is in excess of the dosage (2*10/sup 14//cm/sup 2/) required to render the implanted layer amorphous. Rapid thermal annealing at 550-600 degrees C for 30 s resulted in the solid-phase epitaxial (SPE) regrowth of the implanted region accompanied by high Ga activation and shallow junction (60-130 nm) formation. Good diode electrical characteristics for the Ga implantation into crystalline Si were obtained; leakage current density of 1-1.5 nA/cm/sup 2/ and ideality factor of 1.01-1.03. Ga implantation into preamorphized Si resulted in a two to three times decrease in sheet resistance, but a leakage current density orders of magnitude higher.<
>