Referenced Items are not available for this document.
We used new test structures to evaluate the performance of complementary bipolar transistors fabricated on a SOI substrate by a new 0.35 μm complementary BiCMOS process. The fabricated NPN transistors have a cut-off frequency (fT) of 10.5 GHz at a C-E breakdown voltage of 19.5 V and the PNP transistors have fT of 6.0 GHz at 17.8 V. The test structure measurement showed that the high performance is due to the new isolation structure of the BiCMOS transistor and its layout
Published in:
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Date of Conference: 2001
- Page(s):
- 245 - 249
- Meeting Date :
- 19 Mar 2001-22 Mar 2001
- Print ISBN:
- 0-7803-6511-9
- INSPEC Accession Number:
- 7042866
- Conference Location :
- Kobe
- Digital Object Identifier :
- 10.1109/ICMTS.2001.928670
- Product Type:
- Conference Publications
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