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A new test structure to measure precise location of hot-carrier-induced photoemission peak from gate center of subquarter-micron n-MOSFETs

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7 Author(s)
Funada, M. ; Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan ; Matsuda, T. ; Ohzone, T. ; Odanaka, S.
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A new test structure, which has a 0.5 μm line-and-space polysilicon pattern with the center aligned on the MOSFET's gate center, is proposed for hot carrier analysis of sub-quarter micron devices. Hot-carrier-induced photoemission effects were measured using a photoemission microscope with a liquid N2 cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of the MOSFET gate with a spatial resolution sufficiently less than ±24 nm at microscope magnification of 1000×

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Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

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