Cart (Loading....) | Create Account
Close category search window

Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wenzhi Liang ; Nat. Microelectron. Res. Centre, Cork, Ireland ; van Langevelde, R. ; McCarthy, K.G. ; Mathewson, A.

Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device

Published in:

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Date of Conference:


Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.