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Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

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4 Author(s)
Wenzhi Liang ; Nat. Microelectron. Res. Centre, Cork, Ireland ; van Langevelde, R. ; McCarthy, K.G. ; Mathewson, A.

Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device

Published in:

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Date of Conference:

2001

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