By Topic

Effects of electrical stress on the frequency performance of 0.18 μm technology NMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Naseh, S. ; Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada ; Deen, M.J. ; Marinov, O.

The effects of DC hot-carrier stress on DC and RF performance of submicron LDD NMOSFETs are investigated. It is shown that transit frequency fT decreases as transconductance gm of the transistor is degraded with stress but it is observed that degradation of fT versus stress time is faster than that of g m. This was found to be due to the increase of the gate-source capacitance Cgs with stress. Threshold voltage V th and output conductance gds increase and voltage gain of the device μf decreases with stress. Stability factors K and Δ also change toward higher stability with stress

Published in:

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Date of Conference: