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Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operation

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6 Author(s)
Morizuka, K. ; Toshiba Res. & Dev. Centre, Kawasaki, Japan ; Katoh, R. ; Tsuda, K. ; Asaka, M.
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The high-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) under high-current-density biasing condition are investigated in conjunction with the electron space charge in the collector depletion layer. A significant increase in cutoff frequency f/sub t/ and maximum oscillation frequency f/sub max/ at the early stage of the base push-out was observed in HBTs with a lightly doped n-type collector structure, and is attributed to the collector depletion layer widening and the enhancement of the velocity overshoot effect caused by the increasing electron density.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 11 )