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A novel CMOS VLSI isolation technology using selective chlorine implantation

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2 Author(s)
Pfiester, J.R. ; Motorola Inc., Austin, TX, USA ; Alvis, J.R.

An isolation technology that uses blanket boron and selective chlorine n-well implantation prior to field oxidation is proposed. Chlorine implantation results in an increase in the thermal-oxidation linear-reaction-rate coefficient by a factor of 11.5, which enhances the segregation of dopant atoms in the n-well field region. Due to the redistribution of dopant atoms in the n-well field region, the field threshold voltage magnitude may be increased by as much as 20 V when chlorine implantation is used.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 11 )