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New ratio method for effective channel length and threshold voltage extraction in MOS transistors

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4 Author(s)
B. Cretu ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; T. Boutchacha ; G. Ghibaudo ; F. Balestra

A new `ratio' method for effective channel length and threshold voltage extraction in MOS transistors is proposed. The method, which relies on the same function as that used in the well known shift and ratio procedure, enables the effective channel length and threshold voltage difference to be extracted from simple linear regression applied to a short versus long channel correlation plot of the function Y(Vg)=Id√gm (Id being the drain current and gm the transconductance). This method has successfully been applied to 0.18-0.1 μm CMOS technologies

Published in:

Electronics Letters  (Volume:37 ,  Issue: 11 )