Referenced Items are not available for this document.
The DC characteristics of an AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor are presented. The unique feature of this device is its oxide, which is formed photoelectrochemically at room temperature. For a device with a gate length of 2 μm state-of-the-art values of 540 mA/mm and 62 mS/mm were obtained for the drain current and transconductance, respectively
Published in:
Electronics Letters
(Volume:37
,
Issue:
11
)
Date of Publication: 24 May 2001
- Page(s):
- 715 - 716
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6945822
- Digital Object Identifier :
- 10.1049/el:20010484
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 24 May 2001
- Sponsored by :
- Institution of Engineering and Technology
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