By Topic

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Rotter, T. ; Lab. fur Informationstechnologie, Hannover Univ., Germany ; Mistele, D. ; Stemmer, J. ; Seyboth, M.
more authors

The DC characteristics of an AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor are presented. The unique feature of this device is its oxide, which is formed photoelectrochemically at room temperature. For a device with a gate length of 2 μm state-of-the-art values of 540 mA/mm and 62 mS/mm were obtained for the drain current and transconductance, respectively

Published in:

Electronics Letters  (Volume:37 ,  Issue: 11 )