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Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al 0.48As photodiodes on GaAs substrates

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7 Author(s)
Jang, J.H. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Cueva, G. ; Dumka, D.C. ; Hoke, W.E.
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The design and performance of metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55 μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer

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Electronics Letters  (Volume:37 ,  Issue: 11 )