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A modified BSIM 0.35 μm MOSFET RF large-signal model for microwave circuit application

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3 Author(s)
Hsiao, Chao-Chih ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Ching-Wei Kuo ; Chan, Yi-Jen

A modified 0.35 μm gate-length MOSFET RF large signal model based on BSIM3v3 is presented in this report. The RF large signal model includes a BSIM3v3 model, and some passive components to simulate the device DC and RF characteristics. The added parasitic components are scaleable versus the device gate-width. A 2.4 GHz CMOS MMIC oscillator has been demonstrated based on these active models and on chip passive components

Published in:

Microwave Conference, 2000 Asia-Pacific

Date of Conference:

2000