By Topic

Si-MMIC BiCMOS low-noise high-linearity amplifiers for base station applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
O. Boric-Lubecke ; Bell Labs. Lucent Technol., Murray Hill, NJ, USA ; J. Lin ; T. Ivanov ; R. -H. Yan

Low-noise, high-linearity amplifier chip sets designed for GSM 900 and DCS 1800 base station receivers are reported. The chip sets consisting of LNA and driver amplifier pairs, were fabricated using a 0.25 μm silicon BiCMOS process. Noise figures of 1.35 dB and 1.85 dB were achieved for LNA's at 900 MHz and 1800 MHz, respectively, with corresponding gain values of 13 dB and 11 dB. Driver amplifiers with similar gain values achieved IIP3's greater than 10 dBm, with noise figures under 2.1 dB

Published in:

Microwave Conference, 2000 Asia-Pacific

Date of Conference:

2000