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A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs

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4 Author(s)
Leoni, R.E., III ; Dept. of Comput. Sci. & Electr. Eng., Lehigh Univ., Bethlehem, PA, USA ; Shirokov, M.S. ; Bao, J. ; Hwang, J.

A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models, which can simulate either effect, but not both. The present model has been used to describe both surface- and substrate-related trapping phenomena in epitaxial or ion-implanted MESFETs. The model was experimentally verified in terms of pulsed I-V characteristics and pulsed AC response

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:49 ,  Issue: 6 )

Date of Publication:

Jun 2001

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