Referenced Items are not available for this document.
A new method of growing multiple gate oxide thicknesses below 5 nm using masked oxygen implantation is presented. Multiple thicknesses can be achieved on the same wafer without degradation in the oxide properties. The oxygen implanted oxide quality is comparable to that of thermally grown oxides. Moreover, the effects of oxygen implant damage is minimized with higher implant energies, thicker sacrificial oxides, and low-temperature annealing
Published in:
Electron Devices, IEEE Transactions on
(Volume:48
,
Issue:
6
)
Date of Publication: Jun 2001
- Page(s):
- 1279 - 1281
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6953949
- Digital Object Identifier :
- 10.1109/16.925262
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Jun 2001
- Sponsored by :
- IEEE Electron Devices Society
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