By Topic

Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
S. Matsumoto ; NTT Telecommun. Energy Lab., Kanagawa, Japan ; Y. Hiraoka ; T. Sakai

A state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET was fabricated to evaluate its radio-frequency (RF) performance. The impact of the device structural parameters, such as channel length and drain offset length, on the RF performance of thin-film SOI power MOSFETs was also investigated. The fabricated device with channel length of 0.5 μm and drain offset length of 0.4 μm showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cutoff and maximum oscillation frequencies were 14.7 and 19 GHz, respectively. Its power-added efficiency at 2 GHz was 64%

Published in:

IEEE Transactions on Electron Devices  (Volume:48 ,  Issue: 6 )