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Extraction of eleven model parameters for consistent reproduction of lateral bipolar snapback high-current I-V characteristics in NMOS devices

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3 Author(s)
Ming-Jer Chen ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Hun-Shung Lee ; Shuenn-Tarng Chen

A series of literature models originally devoted to the second breakdown trigger current It2 in a grounded-gate NMOS transistor can further find promising potential in handling high-current I-V due to lateral bipolar snapback. This is achieved primarily by building significant linkage between bipolar current-gain β-related parameters: 1) the collector-to-base junction voltage dependencies A1 and A2 of the medium-level injection β roll-off factor; 2) the high-level β roll-off factor A3; and 3) the collector-to-base junction voltage dependencies A4 and A5 of the collector corner current at the onset of high-level β roll-off. The new parameters A1 to A5 enable a consistent I-V solution along with other existing six model parameters such as the substrate resistance Rsub and its conductivity modulation factor Aτ, the impact ionization coefficients K1 and K2, and the emitter series resistance Re and collector series resistance Rc . Parameter extraction except Rc is thoroughly performed using only the parametric analyzer, and opposed to the traditional procedure, impact ionization coefficients and current gains are all assessed without entering the snapback regime. Remarkably, not only excellent agreements are obtained, but also bipolar snapback I-V measured under the current pulsing condition can be separated into two distinct parts: medium- and high-level injection region. This is quite effective under Re=Rc. Series resistance, although having very low value, is not to be absent under the high-level injection conditions

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 6 )