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A charge pumping device with a potential barrier using inversion charge transfer

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3 Author(s)
In-Young Chung ; Dept. of Electr. Eng., Seoul Nat. Univ., South Korea ; Young June Park ; Min, Hong Shick

A new charge pumping device using the MOS capacitor is proposed and its operational characteristics are studied by device simulations. The device has a structure similar to a MOSFET device consisting of the charge source region, floating node (the output), MOS capacitor, and potential barrier. The charges are transferred from the charge source region to the inversion layer of MOS capacitor when the gate is turned on and a certain portion of them are transferred to the floating node through the barrier while the gate turns off. Through two-dimensional device simulations, it is shown that the new device efficiently obtains a boosted voltage with the magnitude of about 1 V

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 6 )