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An on-chip temperature sensor by utilizing a MOS tunneling diode

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2 Author(s)
Yen-Hao Shih ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hwu, Jenn-Gwo

A simple metal-oxide-semiconductor (MOS) tunneling diode was demonstrated for application to an integrated temperature sensor. The MOS diode equipped with a 21-/spl Aring/ oxide was biased inversely at 1.8 V to monitor its substrate temperature through gate current. The gate current increased more than 700 times when the diode was heated from 20 to 110/spl deg/C. An exponential fitting curve correlated the gate current and the substrate temperature. Moreover, characteristics of the diode were analyzed though C-V and I/sub 1.8 V/-n/sub i/ curves. The good temperature response of the MOS tunneling diode might be useful in self-diagnosis or self-protection IC applications.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 6 )