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Hot-carrier-induced interface-trap generation in n-channel MOSFETs is known to be related to hydrogen-mediated processes. We present a model for interface-trap generation based on release and transport of mobile hydrogen in the gate and sidewall oxides by injected carriers and its interactions with defect-precursors at the Si-SiO/sub 2/ interface. Simulations based on this model are able to predict supply voltage, channel length, and process dependence of the rate of interface-trap generation in n-channel MOSFETs. This approach helps reduce empiricism and technology dependence usually associated with conventional hot-carrier lifetime prediction methods.