By Topic

Spiral inductors on Si p/p/sup +/ substrates with resonant frequency of 20 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Han-Su Kim ; Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA ; Dawei Zheng ; Becker, A.J. ; Ya-Hong Xie

Porous Si of up to 200 μm in thickness has been used to fabricate high-performance spiral inductors on heavily doped Si substrates (0.007 /spl Omega/-cm). Spiral inductors with L/spl sim/5.7 nH are fabricated demonstrating Qmax/spl sim/29 at 7 GHz and f/sub r/>20 GHz. The resonant frequency (f/sub r/) increases with increasing porous Si thickness and saturates beyond 120 μm. A corresponding decrease in total capacitance is observed. Qmax increases monotonically with porous Si layer thickness to beyond 200 μm. For inductors with a smaller footprint, Qmax begins to saturate at less than 100-μm thick porous Si.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 6 )