Modeling and characterization of CMOS readout circuits for monolithic uncooled IR thermoelectric sensors

CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and correlated-double-sampling (CDS) techniques were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect on the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of 0.5 /spl mu/V in a 300 Hz bandwidth.