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Cross-contamination reduction by beam cleaning

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3 Author(s)
Morita, T. ; Sumitomo Eaton Nova Corp., Ehime, Japan ; Kabasawa, M. ; Sugitani, M.

Beam cleaning by Ar+, Xe+, F+ and SiF3+ implants was studied for arsenic cross-contamination reduction. After As+ implantation at 40 keV with a dose of 1×1017 ions/cm2, cross-contamination was measured by TXRF using Ar+ implants at 40 keV with a dose of 5×1015 ions/cm2, to check each cleaning procedure. The concentration of the initial As cross-contamination after As+ implantation increased to about 1×1013 atoms/cm2. The contamination level went down to about 1/10th when using Ar+ cleaning implants with a dose of 8×1017 ions/cm2. For the Xe + cleaning implant, a stronger sputtering effect had been expected for its larger mass, but the contamination reduction was a little less than that of the Ar+ cleaning implant because of less beam current. Regarding F+ and SiF3+ cleaning implants, the reduction is at a higher rate than for the Ar+ case at the same cleaning dose. However, the elapsed time of the cleaning implant was almost the same as that of the Ar+ cleaning implant, but used less beam current. Therefore, for effectiveness and ease of use, an Ar+ cleaning implant with as high current as possible is recommended for beam cleaning

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Ion Implantation Technology, 2000. Conference on

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