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Smart-Cut(R) process: an original way to obtain thin films by ion implantation

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14 Author(s)
Aspar, B. ; Dept. de Microtechnol. et Microelectron., CEA-LETI, Grenoble, France ; Lagahe, C. ; Moriceau, H. ; Soubie, A.
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The Smart-Cut(R) process, based on proton implantation and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally induced splitting. Cavity growth by Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splitting kinetics are controlled by hydrogen diffusion. In the second part, the latest results concerning new structures are presented

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Ion Implantation Technology, 2000. Conference on

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