Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes

The influence of defects produced by high-energy H/sup +/ and He/sup 2+/ implantation on characteristics of power P-i-N diodes was investigated and compared. The analysis was performed for three qualitatively different locations of defect maximum in the dose range covering practical applications. Results show that both projectiles provide identical dynamic behavior of implanted diodes while their influence on blocking capability varies with dose and damage peak location. This effect is explained by the different introduction rate of generation centers and shallow thermal donors when hydrogen is replaced by helium.