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Ion implantation induced damage in silicon carbide studied by non-Rutherford elastic backscattering

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7 Author(s)
Szilagyi, E. ; Res. Inst. of Particle & Nucl. Phys., Budapest, Hungary ; Kotai, E. ; Khanh, N.Q. ; Zolnai, Z.
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Non-Rutherford elastic scattering is a suitable method to obtain concentrations of low atomic number constituents which are difficult to determine when the scattering cross section is Rutherford type. An enhancement factor of over a hundred for the cross section of 12 C can be reached using the 12C(α,α)12 C nuclear resonance at 4260 keV. This resonance was utilized to investigate the ion bombardment induced disorder in the carbon sublattice of 4H-SiC. The disorder was created by implantation of 200 keV and 350 keV Al+ ions at room temperature

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Ion Implantation Technology, 2000. Conference on

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